IPB60R060C7ATMA1

MOSFET HIGH POWER_NEW

IPA60R060C7XKSA1

MOSFET HIGH POWER_NEW

IPT111N20NFDATMA1

MOSFET

IRL60SL216

MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg

IKW50N60DTPXKSA1

IGBT 晶体管 The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.

IPB100N12S305ATMA1

MOSFET N-CHANNEL 100+

IRL60B216

MOSFET 60V, 195A, 1.9 mOhm 172 nC Qg, Logic Lvl

IKW30N65H5XKSA1

IGBT 晶体管 Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e

IPT60R150G7XTMA1

MOSFET HIGH POWER NEW

IPT65R195G7XTMA1

MOSFET

IRL40B209

MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl

IPD60R180C7ATMA1

MOSFET HIGH POWER_NEW

IPC100N04S51R2ATMA1

MOSFET

IPD042P03L3GATMA1

MOSFET SMALL SIGNAL+P-CH

IPD530N15N3GATMA1

MOSFET MV POWER MOS